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Photoluminescence enhancement by localized surface plasmons in AlGaN/GaN/AlGaN double heterostructures
Author(s) -
Polyakov Alexander Y.,
Yun JinHyeon,
Ahn HaengKeun,
Usikov Alexander S.,
Yakimov Eugene B.,
Tarelkin Sergey A.,
Smirnov Nikolai B.,
Shcherbachev Kirill D.,
Helava Heikki,
Makarov Yuri N.,
Kurin Sergey Yu,
Didenko Sergey I.,
Papchenko Boris P.,
Lee InHwan
Publication year - 2015
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201510315
Subject(s) - materials science , photoluminescence , heterojunction , optoelectronics , nanoparticle , epitaxy , plasmon , surface plasmon , planar , gallium nitride , common emitter , diode , nanotechnology , layer (electronics) , computer graphics (images) , computer science
Double heterostructures AlGaN/GaN/AlGaN grown by hydride vapor phase epitaxy and designed for use as light emitting diodes for 360 nm wavelength were patterned by shallow nanoholes and injected with Ag/SiO 2 or Al nanoparticles. A 1.8 times increase in the photoluminescence and microcathodoluminescence signal from the GaN active region was observed for 100 nm diameter Al nanoparticles, the efficiency decreased compared to the reference planar samples for small Al nanoparticles of 30–40 nm diameter, and a moderate increase of 1.2 times was detected for Ag/SiO 2 nanoparticles. The observed phenomena are explained by the GaN emitter coupling with localized surface plasmons produced by metallic nanoparticles. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)