Premium
Low‐thermal budget flash light annealing for Al 2 O 3 surface passivation
Author(s) -
Simon Daniel K.,
Henke Thomas,
Jordan Paul M.,
Fengler Franz P. G.,
Mikolajick Thomas,
Bartha Johann W.,
Dirnstorfer Ingo
Publication year - 2015
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201510306
Subject(s) - passivation , annealing (glass) , hydrogen , plasma , thermal , analytical chemistry (journal) , materials science , fixed charge , chemistry , metallurgy , nanotechnology , molecular physics , thermodynamics , physics , nuclear physics , organic chemistry , layer (electronics) , chromatography
This value is achieved due to a very low interface trap density of below 10 10 eV –1 cm –2 and a fixed charge density of (2–3) × 10 12 cm –2 . In contrast, plasma ALD‐grown Al 2 O 3 layers only reach carrier lifetimes of about 1 ms. This is mainly caused by a more than 10 times higher density of interface traps, and thus, inferior chemical passivation. The strong influence of the deposition parameters is explained by the limitation of hydrogen transport in Al 2 O 3 during low‐thermal budget annealing. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)