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Shallow donor in natural MoS 2
Author(s) -
Son Nguyen T.,
Kim YongSung,
Janzén Erik
Publication year - 2015
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201510297
Subject(s) - shallow donor , rhenium , monolayer , density functional theory , chemistry , resonance (particle physics) , ionization energy , ionization , range (aeronautics) , atomic physics , electron , condensed matter physics , materials science , computational chemistry , physics , inorganic chemistry , nuclear physics , ion , biochemistry , organic chemistry , composite material
Using electron paramagnetic resonance and density functional theory calculations, we show that the shallow donor responsible for the n‐type conductivity in natural MoS 2 is rhenium (Re) with a typical concentration in the low 10 17 cm –3 range and the g ‐values: g || = 2.0274 and g ⊥ = 2.2642. In bulk MoS 2 , the valley–orbit (VO) splitting and ionization energy of the Re shallow donor are determined to be ∼3 meV and ∼27 meV, respectively. Calculations show that the VO splitting of Re approaches the value in bulk if the number of MoS 2 layers is larger than four and increases to 97.9 meV in a monolayer. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)
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