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Optimized emitter contacting on multicrystalline silicon thin film solar cells
Author(s) -
Gawlik A.,
Höger I.,
Bergmann J.,
Plentz J.,
Schmidt T.,
Falk F.,
Andrä G.
Publication year - 2015
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201510186
Subject(s) - materials science , common emitter , optoelectronics , silicon , layer (electronics) , amorphous silicon , epitaxy , excimer laser , reflector (photography) , amorphous solid , thin film , open circuit voltage , diode , monocrystalline silicon , crystalline silicon , laser , optics , nanotechnology , voltage , electrical engineering , chemistry , light source , physics , organic chemistry , engineering
We present an optimized contacting scheme for multicrystalline silicon thin film solar cells on glass based on epitaxially crystallized emitters with a thin Al 2 O 3 layer and a silver back reflector. In a first step a 6.5 µm thick amorphous silicon absorber layer is crystallized by a diode laser. In a second step a thin silicon emitter layer is epitaxially crystallized by an excimer laser. The emitter is covered by an Al 2 O 3 layer with a thickness ranging from 1.0 nm to 2.5 nm, which passivates the surface and acts as a tunnel barrier. On top of the Al 2 O 3 layer a 90–100 nm thick silver back reflector is deposited. The Al 2 O 3 layer was found to have an optimal thickness of 1.5 nm resulting in solar cells with back reflector that achieve a maximum open‐circuit voltage of 567 mV, a short‐circuit current density of 27.9 mA/cm 2 , and an efficiency of 10.9%. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)