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Sulfur doping of AlN and AlGaN for improved n‐type conductivity
Author(s) -
Gordon Luke,
Varley Joel B.,
Lyons John L.,
Janotti Anderson,
Van de Walle Chris G.
Publication year - 2015
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201510165
Subject(s) - conductivity , dopant , doping , materials science , nitride , silicon , sulfur , solubility , electrical resistivity and conductivity , optoelectronics , nanotechnology , chemistry , metallurgy , physics , layer (electronics) , quantum mechanics
Achieving high levels of n‐type conductivity in AlN and high Al‐content nitride alloys is a long standing problem; significant decreases in conductivity are observed as the Al content is increased, a phenomenon that has been attributed to donors such as oxygen or silicon forming DX centers. We address this problem through a comprehensive first‐principles hybrid density functional study of potential n‐type dopants, identifying S N and Se N as two elements which are potential shallow donors because they do not undergo a DX transition. In particular, S N is highly promising as an n‐type dopant because it also has a low formation energy and hence a high solubility. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)
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