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Asymmetry in electrical properties of Al‐doped TiO 2 film with respect to bias voltage
Author(s) -
Jeon Woojin,
Rha Sang Ho,
Lee Woongkyu,
An Cheol Hyun,
Chung Min Jung,
Kim Sang Hyun,
Cho Cheol Jin,
Kim Seong Keun,
Hwang Cheol Seong
Publication year - 2015
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201510146
Subject(s) - doping , schottky barrier , materials science , atomic layer deposition , capacitance , analytical chemistry (journal) , schottky effect , layer (electronics) , electrode , condensed matter physics , optoelectronics , nanotechnology , chemistry , physics , diode , chromatography
The energy diagram of RuO 2 /Al‐doped TiO 2 /RuO 2 structures was estimated from the capacitance–voltage and leakage current density–voltage curves. The Al‐doping profile in TiO 2 film was varied by changing position of the atomic layer deposition cycle of Al 2 O 3 during the atomic layer deposition of 9 nm‐thick TiO 2 film. The interface between the TiO 2 film and the RuO 2 electrode containing Al‐doping layer showed a higher Schottky barrier by 0.1 eV compared with the opposite interface without the doping layer. The evolution of various leakage current profiles upon increasing the bias with opposite polarity could be well explained by the asymmetric Schottky barrier. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)