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Ambipolar inverters with natural origin organic materials as gate dielectric and semiconducting layer
Author(s) -
Petritz Andreas,
Fian Alexander,
Głowacki Eric D.,
Sariciftci Niyazi Serdar,
Stadlober Barbara,
IrimiaVladu Mihai
Publication year - 2015
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201510139
Subject(s) - materials science , noise margin , ambipolar diffusion , optoelectronics , layer (electronics) , semiconductor , transistor , nanotechnology , dielectric , bilayer , gate dielectric , voltage , electrical engineering , chemistry , electron , engineering , biochemistry , physics , quantum mechanics , membrane
Thin film electronics fabricated with non‐toxic and abundant materials are enabling for emerging bioelectronic technologies. Herein complementary‐like inverters comprising transistors using 6,6′‐dichloroindigo as the semiconductor and trimethylsilyl‐cellulose (TMSC) films on anodized aluminum as bilayer dielectric layer are demonstrated. The inverters operate both in the first and third quadrant, exhibiting a maximum static gain of 22 and a noise margin of 58% at a supply voltage of 14 V. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)