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Low‐temperature atomic layer deposition of MoO x for silicon heterojunction solar cells
Author(s) -
Macco B.,
Vos M. F. J.,
Thissen N. F. W.,
Bol A. A.,
Kessels W. M. M.
Publication year - 2015
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201510117
Subject(s) - atomic layer deposition , passivation , heterojunction , materials science , silicon , amorphous solid , amorphous silicon , molybdenum , optoelectronics , substrate (aquarium) , thin film , layer (electronics) , nanotechnology , chemical engineering , crystalline silicon , chemistry , metallurgy , crystallography , oceanography , geology , engineering
The preparation of high‐quality molybdenum oxide (MoO x ) is demonstrated by plasma‐enhanced atomic layer deposition (ALD) at substrate temperatures down to 50 °C. The films are amorphous, slightly substoichiometric with respect to MoO 3 , and free of other elements apart from hydrogen (&11 at%). The films have a high transparency in the visible region and their compatibility with a‐Si:H passivation schemes is demonstrated. It is discussed that these aspects, in conjunction with the low processing temperature and the ability to deposit very thin conformal films, make this ALD process promising for the future application of MoO x in hole‐selective contacts for silicon heterojunction solar cells. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)