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Thickness‐dependent electroforming behavior of ultra‐thin Ta 2 O 5 resistance switching layer
Author(s) -
Park Tae Hyung,
Song Seul Ji,
Kim Hae Jin,
Kim Soo Gil,
Chung Suock,
Kim Beom Yong,
Lee Kee Jeung,
Kim Kyung Min,
Choi Byung Joon,
Hwang Cheol Seong
Publication year - 2015
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201510110
Subject(s) - electroforming , electrode , materials science , electric field , layer (electronics) , tin , electron , optoelectronics , analytical chemistry (journal) , nanotechnology , chemistry , metallurgy , chromatography , physics , quantum mechanics
Electroforming behaviours of Ta 2 O 5 resistance switching memory cell with a diameter of 28 nm and different thickness (0.5–2.0 nm) of Ta 2 O 5 layer have been examined. The devices showed a constant forming electric field of 0.54 V/nm regardless of Ta 2 O 5 thickness. The electroforming with negative bias to top TiN electrode was ascribed to electric field‐ driven migration of oxygen vacancies, originally residing near the bottom interface, toward the top electrode interface and formation of conducting filaments. The estimated electroforming energy (0.094–0.14 eV) was favourably compared with the hopping energy of electrons from the V O site to a nearby Ta site. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)