Premium
Magnetic non‐volatile flip‐flop with spin‐Hall assistance
Author(s) -
Wang Zhaohao,
Zhao Weisheng,
Deng Erya,
Zhang Yue,
Klein JacquesOlivier
Publication year - 2015
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201510097
Subject(s) - spin transfer torque , flip flop , spin (aerodynamics) , voltage , hall effect , reliability (semiconductor) , dissipation , spin hall effect , current density , optoelectronics , electrical engineering , materials science , condensed matter physics , computer science , physics , magnetic field , engineering , cmos , power (physics) , magnetization , electron , spin polarization , quantum mechanics , electrical resistivity and conductivity , thermodynamics
A novel multi‐bit non‐volatile flip‐flop (NVFF) written by spin‐Hall‐assisted spin‐transfer torque (STT) is proposed. This NVFF employs perpendicular‐anisotropy MTJs and requires an STT current combined with a spin‐Hall current to write the data. Thanks to the assistance of spin‐Hall effect (SHE), the incubation delay required by the conventional STT switching can be eliminated to achieve fast operation. Our proposed NVFF uses multi‐bit architecture and shows high‐density and low‐energy advantages over hybrid NV/volatile FFs in the application of the NV register file. Sim‐ulation results show that the proposed spin‐Hall‐assisted NVFF saves ∼31% storage density and ∼32% energy dissipation compared with the conventional STT‐NVFF. Moreover, the reliability of MTJ barrier is enhanced due to the reduction of the write voltage. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)