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Nano‐glass frit for inkjet printed front side metallization of silicon solar cells prepared by sol–gel process
Author(s) -
Kang Seong Gu,
Lee Chang Wan,
Chung Yoon Jang,
Kim Chang Gyoun,
Kim Seongtak,
Kim Donghwan,
Kim Cheol Jin,
Lee Young Kuk
Publication year - 2015
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201510067
Subject(s) - frit , materials science , sheet resistance , contact resistance , wafer , polycrystalline silicon , silicon , scanning electron microscope , nano , microstructure , composite material , transmission electron microscopy , coating , contact angle , layer (electronics) , solar cell , equivalent series resistance , flat glass , inkwell , optoelectronics , nanotechnology , thin film transistor , physics , quantum mechanics , voltage
Sol–gel derived nano‐sized glass frits were incorporated into the Ag conductive ink for silicon solar cell metallization. This mixture was specifically formulated for inkjet printing on textured Si wafers with 80 nm thick SiN x anti reflection coating layers. The correlation between the contact resistance and interface microstructures were studied using scanning electron microscopy and transmission electron microscopy. In addition, the specific contact resistance between the front contact and emitter was measured at various firing conditions using the transfer length model. On an emitter with the sheet resistance of 60 Ω/sq, a specific contact resistance below 5 mΩ cm 2 could be achieved at a peak firing temperature around 800 °C. We found that the incorporated nano‐glass frit act as a very effective fire through agent, and an abundant amount of Ag crystallites was observed along the interface glass layer. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)