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Accelerated formation of the boron–oxygen complex in p‐type Czochralski silicon
Author(s) -
Hamer Phillip,
Hallam Brett,
Abbott Malcolm,
Wenham Stuart
Publication year - 2015
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201510064
Subject(s) - boron , silicon , oxygen , saturation (graph theory) , czochralski method , analytical chemistry (journal) , photon , chemistry , intensity (physics) , materials science , optics , optoelectronics , physics , mathematics , organic chemistry , chromatography , combinatorics
This Letter reports on the acceleration of the rate of formation of the boron–oxygen defect in p‐type Czochralski silicon with illumination intensities in excess of 2.1 × 10 17 photons/cm 2 /s. It is observed that increased light intensities greatly enhance the rate of defect formation, without increasing the saturation concentration of the defect. These results suggest a dependence of the defect formation rate upon the total majority carrier concentration. Finally, a method using temperatures up to 475 K and an illumination intensity of 1.68 × 10 19 photons/cm 2 /s is shown to result in near‐complete defect formation within seconds. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)
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