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Forming‐free resistive switching characteristics and improved reliability in sub‐stoichiometric NbN x films
Author(s) -
Kim HeeDong,
Yun Min Ju,
Kim Tae Geun
Publication year - 2015
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201510022
Subject(s) - niobium nitride , stoichiometry , materials science , nitride , niobium , reliability (semiconductor) , diffraction , resistive touchscreen , analytical chemistry (journal) , nanotechnology , chemistry , electrical engineering , metallurgy , optics , physics , thermodynamics , layer (electronics) , power (physics) , organic chemistry , engineering , chromatography
In this study, we demonstrate forming‐free and reliable resistive switching (RS) characteristics by controlling the stoichiometry of niobium nitride (NbN x ) films. Compared to a perfect stoichiometric NbN x film, a decrease of 6% nitrogen content and an increase of 5% O 2 content are found in the sub‐stoichiometric NbN x sample (s‐NbN x ), and a structural change for the s‐NbN x film is observed from X‐ray diffraction results, which results in the possibility of abundant defect generation in the s‐NbN x film at virgin state. In the RS test, the s‐NbN x film normally carries out well without initial forming because of the already‐formed conducting filaments; in particular, in the reliability study, the s‐NbN x film shows more stable dc cycling characteristics for 1000 cycles without any degradation and smaller variations in the operating current and voltage characteristics. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)