High‐performance a‐Si 1– x  O  x  :H/c‐Si heterojunction solar cells realized by the a‐Si:H/a‐Si 1– x  O  x  :H stack buffer layer | Zendy

Zhang He | Zendy; Nakada Kazuyoshi | Zendy; Miyajima Shinsuke | Zendy; Konagai Makoto | Zendy

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High‐performance a‐Si 1– x O x :H/c‐Si heterojunction solar cells realized by the a‐Si:H/a‐Si 1– x O x :H stack buffer layer

Author(s) -

Zhang He,

Nakada Kazuyoshi,

Miyajima Shinsuke,

Konagai Makoto

Publication year - 2015

Publication title -

physica status solidi (rrl) – rapid research letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.786

H-Index - 68

eISSN - 1862-6270

pISSN - 1862-6254

DOI - 10.1002/pssr.201409546

Subject(s) - materials science , silicon , amorphous solid , layer (electronics) , wafer , amorphous silicon , microcrystalline , stack (abstract data type) , heterojunction , analytical chemistry (journal) , optoelectronics , thin film , solar cell , common emitter , crystalline silicon , nanotechnology , crystallography , chemistry , chromatography , computer science , programming language

We used amorphous silicon oxide (a‐Si 1– x O x :H) and microcrystalline silicon oxide (µc‐Si 1– x O x :H) as buffer layer and p‐type emitter layer, respectively, in n‐type silicon hetero‐junction (SHJ) solar cells. We proposed to insert a thin (2 nm) intrinsic amorphous silicon (a‐Si:H) thin film between the thin (2.5 nm) a‐Si 1– x O x :H buffer layer and the p‐layer to form a stack buffer layer of a‐Si:H/a‐Si 1– x O x :H. As a result, a high open‐circuit voltage ( V OC ) and a high fill factor (FF) were obtained at the same time. Finally, a high efficiency of 19.0% ( J SC = 33.46 mA/cm 2 , V OC = 738 mV, FF = 77.0%) was achieved on a 100 μm thick polished wafer using the stack buffer layer.(© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

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