Premium
Chemical depth profiling and 3D reconstruction of III–V heterostructures selectively grown on non‐planar Si substrates by MOCVD
Author(s) -
Gorbenko V.,
Veillerot M.,
Grenier A.,
Audoit G.,
Hourani W.,
Martinez E.,
Cipro R.,
Martin M.,
David S.,
Bao X.,
Bassani F.,
Baron T.,
Barnes J.P.
Publication year - 2015
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201409544
Subject(s) - heterojunction , nanometre , metalorganic vapour phase epitaxy , planar , materials science , auger , secondary ion mass spectrometry , profiling (computer programming) , chemical composition , characterization (materials science) , optoelectronics , high resolution , nanotechnology , chemistry , analytical chemistry (journal) , ion , epitaxy , layer (electronics) , geology , computer graphics (images) , physics , organic chemistry , atomic physics , remote sensing , chromatography , computer science , composite material , operating system
The chemical characterization of novel 3D architectures with nanometre‐scale dimensions is extremely challenging. The chemical composition of InGaAs/AlAs quantum wells selectively grown in SiO 2 trenches, 100–300 nm wide, is studied. Combining high lateral resolution 3D ToF‐SIMS analysis and Auger measurements, the chemical composition of individual trenches was obtained confirming the uniformity of these III–V heterostructures. These results correlate well with an average approach using SIMS depth profiling. The effects of ion beam orientation on the surface topography of confined structures were highlighted. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)