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Dynamic moderation of an electric field using a SiO 2 switching layer in TaO x ‐based ReRAM
Author(s) -
Wang Qi,
Itoh Yaomi,
Tsuruoka Tohru,
Ohtsuka Shintaro,
Shimizu Tomohiro,
Shingubara Shoso,
Hasegawa Tsuyoshi,
Aono Masakazu
Publication year - 2015
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201409531
Subject(s) - resistive random access memory , electric field , materials science , degradation (telecommunications) , electrical conductor , layer (electronics) , optoelectronics , nanotechnology , analytical chemistry (journal) , electrode , electrical engineering , composite material , chemistry , physics , engineering , quantum mechanics , chromatography
ReRAMs using oxygen vacancy drift in their resistive switching are promising candidates as next generation memory devices. One remaining issue is degradation of the on/off ratio down to 10 2 or less with an increased number of switching cycles. Such degradation is caused by a local hard breakdown in a set process due to a very high electric field formed just before the completion of a conductive filament formation. We found that introducing an ultra‐thin SiO 2 layer prevents the hard breakdown by dynamical moderation of the electric field formed in the TaO x matrix, resulting in repeated switching while retaining a higher on/off ratio of about 10 5 . (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)
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