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A new topological insulator built from quasi one‐dimensional atomic ribbons
Author(s) -
Schönherr Piet,
Zhang Shilei,
Liu Yuanqian,
Kusch Patryk,
Reich Stephanie,
Giles Terence,
Daisenberger Dominik,
Prabhakaran Dharmalingam,
Chen Yulin,
Hesjedal Thorsten
Publication year - 2015
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201409518
Subject(s) - orthorhombic crystal system , topological insulator , topology (electrical circuits) , materials science , insulator (electricity) , crystal structure , band gap , photoemission spectroscopy , nanowire , condensed matter physics , doping , crystallography , x ray photoelectron spectroscopy , nanotechnology , chemistry , physics , optoelectronics , mathematics , nuclear magnetic resonance , combinatorics
A novel topological insulator with orthorhombic crystal structure is demonstrated. It is characterized by quasi one‐dimensional, conducting atomic chains instead of the layered, two‐dimensional sheets known from the established Bi 2 (Se,Te) 3 system. The Sb‐doped Bi 2 Se 3 nanowires are grown in a TiO 2 ‐catalyzed process by chemical vapor deposition. The binary Bi 2 Se 3 is transformed from rhombohedral to orthorhombic by substituting Sb on ∼38% of the Bi sites. Pure Sb 2 Se 3 is a topologically trivial band insulator with an orthorhombic crystal structure at ambient conditions, and it is known to transform into a topological insulator at high pressure. Angle‐resolved photoemission spectroscopy shows a topological surface state, while Sb doping also tunes the Fermi level to reside in the bandgap. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)