Premium
Novel interconnection scheme for thin‐film silicon solar modules with conductive intermediate reflector
Author(s) -
Turan Bugra,
Bauer Andreas,
Lambertz Andreas,
Merdzhanova Tsvetelina,
Haas Stefan
Publication year - 2015
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201409497
Subject(s) - interconnection , reflector (photography) , materials science , optoelectronics , silicon , scheme (mathematics) , electrical conductor , crystalline silicon , solar cell , computer science , electronic engineering , optics , engineering , telecommunications , physics , composite material , light source , mathematical analysis , mathematics
Intermediate reflector layers are commonly used for light man‐agement purposes in multi‐junction silicon based devices containing a‐Si:H top‐ and µc‐Si:H bottom‐sub‐cells. A low resistance of such layers can have a severe impact on the solar module performance due to shunting of the bottom sub‐cell by the P2 scribe. A common solution for this problem is the use of an additional scribe line. However, not only the additional processing step is disadvantageous but also the dead area losses are increased as well by the additional scribe. This work introduces a novel solar cell stripe interconnection scheme that requires only three scribing processes with similar dead area losses as they would be apparent in the standard interconnection scheme. An implementation to mini modules shows no negative impact on the electrical properties and simultaneously reducing the required number of scribing steps. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)