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Laser illumination for manipulation of hydrogen charge states in silicon solar cells
Author(s) -
Hamer Phillip,
Wang Sisi,
Hallam Brett,
Wenham Stuart,
Chong Chee Mun,
Wenham Alison,
Abbott Malcolm
Publication year - 2015
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201409495
Subject(s) - passivation , hydrogen , silicon , materials science , optoelectronics , open circuit voltage , charge (physics) , wavelength , laser , carrier lifetime , charge carrier , solar cell , voltage , atomic physics , nanotechnology , optics , chemistry , electrical engineering , physics , layer (electronics) , engineering , quantum mechanics , organic chemistry
This Letter investigates the important parameters of illumination for control of hydrogen charge states in p‐type silicon solar cells. Through variations in the wavelength and intensity of illumination, evidence is provided for the importance of the neutral charge state of interstitial hydrogen, H 0 , for the passivation of defects in upgraded metallurgical grade (UMG) silicon. It is shown that through this approach minority carrier lifetimes may be achieved in excess of those realised through previous techniques, resulting in open‐circuit voltages (i V OC ) over 710 mV. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)