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Ultra high amorphous silicon passivation quality of crystalline silicon surface using in‐situ post‐deposition treatments
Author(s) -
Meddeb H.,
Bearda Twan,
Dimassi Wissem,
Abdulraheem Yaser,
Ezzaouia Hatem,
Gordon Ivan,
Szlufcik Jozef,
Poortmans Jef
Publication year - 2015
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201409494
Subject(s) - passivation , materials science , silicon , plasma , annealing (glass) , hydrogen , in situ , amorphous silicon , amorphous solid , plasma enhanced chemical vapor deposition , deposition (geology) , analytical chemistry (journal) , chemical engineering , optoelectronics , nanotechnology , crystalline silicon , metallurgy , chemistry , crystallography , environmental chemistry , layer (electronics) , paleontology , physics , organic chemistry , quantum mechanics , sediment , engineering , biology
A parametric study of post‐deposition hydrogen plasma treatment of intrinsic a:Si:H films is performed. We demonstrate a significant improvement in passivation of c‐Si(100) promoting epitaxy after an in‐situ hydrogen plasma treatment depending mainly on the pressure and slightly on the power. Plasma diagnostic indicates an increase of H α * signal with high power and low pressure. However, our analysis reveals a better hydrogen incorporation with high pressure and a slight increase in monohydride with high power. Longer H 2 plasma duration up to 50 s shows no detrimental effect on the passivation quality. Optimizing the in‐situ H 2 plasma treatment, high minority carrier lifetime over 15 ms was achieved after short thermal annealing. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)