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Orientations of ZnO grown on GaN ( 1 0 1 ̄ 1 )
Author(s) -
Shih YiSen,
Lin PeiYi,
Wei LinLung,
Chang Li
Publication year - 2015
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201409467
Subject(s) - epitaxy , transmission electron microscopy , chemical vapor deposition , materials science , diffraction , crystallography , lattice (music) , optoelectronics , nanotechnology , chemistry , optics , physics , layer (electronics) , acoustics
On semipolar GaN ( 10 1 ̄ 1 ) , epitaxial ZnO grown by chemical vapor deposition consists of two distinct orientations as evidenced by transmission electron microscopy and X‐ray diffraction. The initially grown ZnO on GaN follows the GaN lattice with the epitaxial relationship of ZnO ( 10 1 ̄ 1 ) // GaN ( 10 1 ̄ 1 ) and[ 1 2 ̄ 10 ] ZnO // [ 1 2 ̄ 10 ] GaN . The other oriented ZnO domains then grow on faceted ( 10 1 ̄ 1 )ZnO with ZnO ( 000 2 ) //ZnO ( 10 1 ̄ 1 ) and[ 2 ̄ 110 ] ZnO // [ 1 1 ̄ 0 1 ̄ ] ZnOwith good coherency with the ( 10 1 ̄ 1 ) ‐oriented grains. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)