Premium
High mobility In 2 O 3 :H transparent conductive oxides prepared by atomic layer deposition and solid phase crystallization
Author(s) -
Macco B.,
Wu Y.,
Vanhemel D.,
Kessels W. M. M.
Publication year - 2014
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201409426
Subject(s) - materials science , crystallization , electron mobility , amorphous solid , transparent conducting film , atomic layer deposition , heterojunction , layer (electronics) , chemical engineering , phase (matter) , analytical chemistry (journal) , electrical resistivity and conductivity , optoelectronics , nanotechnology , crystallography , chemistry , electrical engineering , organic chemistry , chromatography , engineering
The preparation of high‐quality In 2 O 3 :H, as transparent conductive oxide (TCO), is demonstrated at low temperatures. Amorphous In 2 O 3 :H films were deposited by atomic layer deposition at 100 °C, after which they underwent solid phase crystallization by a short anneal at 200 °C. TEM analysis has shown that this approach can yield films with a lateral grain size of a few hundred nm, resulting in electron mobility values as high as 138 cm 2 /V s at a device‐relevant carrier density of 1.8 × 10 20 cm –3 . Due to the extremely high electron mobility, the crystallized films simultaneously exhibit a very low resistivity (0.27 mΩ cm) and a negligible free carrier absorption. In conjunction with the low temperature processing, this renders these films ideal candidates for front TCO layers in for example silicon heterojunction solar cells and other sensitive optoelectronic applications. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)