Effect of the annealing temperature of thin Hf 0.3 Zr 0.7 O 2 films on their energy storage behavior

With increasing annealing temperature ( T anneal ), the magnitude of the electric fields for the antiferroelectric‐to‐ferro‐electric ( E AF ) and ferroelectric‐to‐antiferroelectric ( E FA ) transition of a 9.2 nm thick Hf 0.3 Zr 0.7 O 2 film decreased. The energy storage densities of the Hf 0.3 Zr 0.7 O 2 films crystallized at 400 °C, 500 °C, and 600 °C were as large as 42.2 J/cm 3 , 40.4 J/cm 3 , and 28.3 J/cm 3 , respectively, at the electric field of 4.35 MV/cm. The maximum dielectric constant of the Hf 0.3 Zr 0.7 O 2 film crystallized at 600 °C was the largest (∼46) as it had the smallest E AF and E FA , whereas the leakage current density of the film crystallized at 400 °C was the smallest. The 400 °C of T anneal was the optimum condition for energy storage application. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)