Premium
Effect of the annealing temperature of thin Hf 0.3 Zr 0.7 O 2 films on their energy storage behavior
Author(s) -
Park Min Hyuk,
Kim Han Joon,
Kim Yu Jin,
Moon Taehwan,
Kim Keum Do,
Hwang Cheol Seong
Publication year - 2014
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201409349
Subject(s) - annealing (glass) , antiferroelectricity , materials science , ferroelectricity , dielectric , electric field , energy storage , analytical chemistry (journal) , thin film , composite material , nanotechnology , optoelectronics , thermodynamics , chemistry , organic chemistry , physics , power (physics) , quantum mechanics
With increasing annealing temperature ( T anneal ), the magnitude of the electric fields for the antiferroelectric‐to‐ferro‐electric ( E AF ) and ferroelectric‐to‐antiferroelectric ( E FA ) transition of a 9.2 nm thick Hf 0.3 Zr 0.7 O 2 film decreased. The energy storage densities of the Hf 0.3 Zr 0.7 O 2 films crystallized at 400 °C, 500 °C, and 600 °C were as large as 42.2 J/cm 3 , 40.4 J/cm 3 , and 28.3 J/cm 3 , respectively, at the electric field of 4.35 MV/cm. The maximum dielectric constant of the Hf 0.3 Zr 0.7 O 2 film crystallized at 600 °C was the largest (∼46) as it had the smallest E AF and E FA , whereas the leakage current density of the film crystallized at 400 °C was the smallest. The 400 °C of T anneal was the optimum condition for energy storage application. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)