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Interface perpendicular magnetic anisotropy in Fe/MgAl 2 O 4 layered structures
Author(s) -
Koo Jungwoo,
Sukegawa Hiroaki,
Mitani Seiji
Publication year - 2014
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201409340
Subject(s) - epitaxy , perpendicular , materials science , magnetoresistance , condensed matter physics , anisotropy , tunnel magnetoresistance , magnetic anisotropy , layer (electronics) , crystallography , chemistry , nanotechnology , magnetic field , magnetization , optics , physics , geometry , mathematics , quantum mechanics
The recently reported MgAl 2 O 4 tunnel barrier for the magnetic tunnel junctions (MTJs) is considered to be an alternative to the conventional MgO barrier, since a large tunnel magnetoresistance (TMR) ratio was obtained for the MgAl 2 O 4 ‐based MTJs. In this study, we demonstrated large perpendicular magnetic anisotropy (PMA) arising from the interfaces of Fe(001)/MgAl 2 O 4 layered structures, which can be useful for developing perpendicularly magnetized MgAl 2 O 4 ‐based MTJs. A PMA energy density of 0.4 MJ/m 3 was achieved for an epitaxially grown 0.7 nm thick Fe/MgAl 2 O 4 (001). Interestingly, the interface PMA was also obtained for the Fe/non‐epitaxially grown MgAl 2 O 4 structures, which indicates that the crystallographic structure of MgAl 2 O 4 layer has no critical influence on the obtained PMA.Large interface perpendicular magnetic anisotropy in the epitaxially grown Fe (0.7 nm)/MgAl 2 O 4 layered structure (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)