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Ion implantation into amorphous Si layers to form carrier‐selective contacts for Si solar cells
Author(s) -
Feldmann Frank,
Müller Ralph,
Reichel Christian,
Hermle Martin
Publication year - 2014
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201409312
Subject(s) - passivation , materials science , doping , optoelectronics , ion implantation , boron , amorphous silicon , amorphous solid , solar cell , ion , silicon , nanotechnology , crystalline silicon , layer (electronics) , chemistry , organic chemistry
This paper reports our findings on the boron and phosphorus doping of very thin amorphous silicon layers by low energy ion implantation. These doped layers are implemented into a so‐called tunnel oxide passivated contact structure for Si solar cells. They act as carrier‐selective contacts and, thereby, lead to a significant reduction of the cell's recombination current. In this paper we address the influence of ion energy and ion dose in conjunction with the obligatory high‐temperature anneal needed for the realization of the passivation quality of the carrier‐selective contacts. The good results on the phosphorus‐doped ( implied V oc = 725 mV) and boron‐doped passivated contacts (i V oc = 694 mV) open a promising route to a simplified interdigitated back contact (IBC) solar cell featuring passivated contacts. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)