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Delta‐layer doping profile in diamond providing high carrier mobility
Author(s) -
Kukushkin V. A.,
Snider G.,
Bogdanov S. A.,
Chernov V. V.
Publication year - 2014
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201409302
Subject(s) - doping , dopant , materials science , diamond , maxima , electron mobility , layer (electronics) , optoelectronics , nanotechnology , composite material , art , performance art , art history
We show that the nano‐scale delta‐layer doping profile in diamond can significantly influence both the carrier mobility and two‐dimensional conductivity. We numerically considered and compared a simple boron doping profile with one maximum at the delta‐layer center and a more complicated profile with two maxima inside the delta layer and a minimum at its center. As a result we concluded that in the last case the hole mobility and the two‐dimensional conductivity are higher by more than 3 times and 60% respectively than in the first case. The physical reason for the improvement is that for the two‐maxima doping profile the peaks of the carrier and ionized dopant densities are spatially separated, whereas for the simple one‐maximum doping profile they coincide. So, the carrier scattering on ionized dopants for the two‐maxima profile significantly decreases in comparison with the simple one‐maximum profile. The proposed two‐maxima delta‐layer doping profile can be used for the creation of diamond‐based micro‐ and nanoelectronics devices, e.g. high‐frequency field effect transistors.Two‐maxima delta‐layer doping profile and the spatial distribution of the carrier density. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)