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Substitutional phosphorus incorporation in nanocrystalline CVD diamond thin films
Author(s) -
Janssen Wiebke,
Turner Stuart,
Sakr Georges,
Jomard François,
Barjon Julien,
Degutis Giedrius,
Lu YingGang,
D'Haen Jan,
Hardy An,
Bael Marlies Van,
Verbeeck Johan,
Tendeloo Gustaaf Van,
Haenen Ken
Publication year - 2014
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201409235
Subject(s) - raman spectroscopy , chemical vapor deposition , diamond , nanocrystalline material , materials science , phosphine , dopant , homogeneous , chemical engineering , analytical chemistry (journal) , spectroscopy , thin film , doping , nanotechnology , chemistry , optics , metallurgy , optoelectronics , organic chemistry , engineering , physics , quantum mechanics , thermodynamics , catalysis
Nanocrystalline diamond (NCD) thin films were produced by chemical vapor deposition (CVD) and doped by the addition of phosphine to the gas mixture. The characterization of the films focused on probing the incorporation and distribution of the phosphorus (P) dopants. Electron microscopy evaluated the overall film morphology and revealed the interior structure of the nanosized grains. The homogeneous films with distinct diamond grains featured a notably low sp 2 :sp 3 ‐ratio as confirmed by Raman spectroscopy. High resolution spectroscopy methods demonstrated a homogeneous P‐incorporation, both in‐depth and in‐plane. The P concentration in the films was determined to be in the order of 10 19 cm –3 with a significant fraction integrated at substitutional donor sites. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)