Monolithic circuits with epitaxial graphene/silicon carbide transistors | Zendy

Hertel Stefan | Zendy; Krieger Michael | Zendy; Weber Heiko B. | Zendy

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Monolithic circuits with epitaxial graphene/silicon carbide transistors

Author(s) -

Hertel Stefan,

Krieger Michael,

Weber Heiko B.

Publication year - 2014

Publication title -

physica status solidi (rrl) – rapid research letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.786

H-Index - 68

eISSN - 1862-6270

pISSN - 1862-6254

DOI - 10.1002/pssr.201409171

Subject(s) - silicon carbide , materials science , graphene , epitaxy , nand gate , transistor , substrate (aquarium) , optoelectronics , electronic circuit , silicon , inverter , semiconductor , nanotechnology , electronic engineering , electrical engineering , logic gate , engineering , metallurgy , layer (electronics) , voltage , oceanography , geology

A concept is presented that uses epitaxial graphene on silicon carbide (SiC) for digital circuits. It uses graphene as a metal and the underlying substrate SiC as semiconductor. On the base of transistors with excellent switching behavior, Inverter and NAND operation is demonstrated.(© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

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