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Monolithic circuits with epitaxial graphene/silicon carbide transistors
Author(s) -
Hertel Stefan,
Krieger Michael,
Weber Heiko B.
Publication year - 2014
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201409171
Subject(s) - silicon carbide , materials science , graphene , epitaxy , nand gate , transistor , substrate (aquarium) , optoelectronics , electronic circuit , silicon , inverter , semiconductor , nanotechnology , electronic engineering , electrical engineering , logic gate , engineering , metallurgy , layer (electronics) , voltage , oceanography , geology
A concept is presented that uses epitaxial graphene on silicon carbide (SiC) for digital circuits. It uses graphene as a metal and the underlying substrate SiC as semiconductor. On the base of transistors with excellent switching behavior, Inverter and NAND operation is demonstrated.(© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)