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Radio frequency magnetron sputtered epitaxial Cu 2 ZnSnS 4 thin film on ZnS(100)
Author(s) -
Song Ning,
Li Wei,
Hao Xiaojing,
Huang Yidan,
Green Martin A.
Publication year - 2014
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201409169
Subject(s) - czts , kesterite , materials science , epitaxy , thin film , substrate (aquarium) , sputter deposition , optoelectronics , cavity magnetron , band gap , sputtering , optics , nanotechnology , layer (electronics) , physics , geology , oceanography
Abstract Heteroepitaxial growth of kesterite Cu 2 ZnSnS 4 (CZTS) thin film on cubic ZnS(100) single crystal substrate was achieved by radio frequency magnetron sputtering from a single CZTS target. An optimal substrate temperature in the range of 470–500 °C is found suitable for this epitaxial growth. The growth of CZTS was confirmed to be along a ‐axis. The sputtered CZTS thin film is homogeneous throughout the whole film. The band gap of the film is found to be approximately 1.51 eV, i.e., promising for high efficiency thin film solar cells.Cross‐sectional high resolution TEM image recorded at the interface region of epitaxial CZTS and ZnS(100) substrate. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)