Premium
Room‐temperature photoluminescence in quasi‐2D TlGaSe 2 and TlInS 2 semiconductors
Author(s) -
Grivickas Vytautas,
Gulbinas Karolis,
Gavryushin Vladimir,
Bikbajevas Vitalijus,
Korolik Olga V.,
Mazanik Alexander V.,
Fedotov Alexander K.
Publication year - 2014
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201409148
Subject(s) - photoluminescence , materials science , semiconductor , photoluminescence excitation , stacking , anisotropy , absorption (acoustics) , spectroscopy , excitation , optoelectronics , absorption edge , spectral line , analytical chemistry (journal) , molecular physics , optics , band gap , chemistry , physics , organic chemistry , chromatography , quantum mechanics , composite material , astronomy
We reveal the intrinsic band‐to‐band photoluminescence (PL) in Tl‐based anisotropic semiconductors by means of confocal spectroscopy. The PL achieves largest value for k ⊥ c , where c is the layers stacking axis, and is dependent on polarization. In TlGaSe 2 , the band edge absorption spectra were determined at different excitation geometry by using techniques of depth‐resolved free‐carrier absorption (FCA) and photoacoustic response (PAR). A strong absorption enhancement is detected in a large spectral area in the near‐surface region lateral to ab plane. The band‐to‐band absorption enhancement is the most probable cause for high PL intensity. The near‐surface behavior, different from the bulk, might implement useful photonic functionality at room temperature (RT). (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)