Premium
Electrical stability of multilayer MoS 2 field‐effect transistor under negative bias stress at various temperatures
Author(s) -
Yang Suk,
Park Solah,
Jang Sukjin,
Kim Hojoong,
Kwon JangYeon
Publication year - 2014
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201409146
Subject(s) - transistor , instability , materials science , optoelectronics , molybdenum disulfide , field effect transistor , stress (linguistics) , semiconductor , threshold voltage , amorphous solid , voltage , chemistry , electrical engineering , physics , composite material , mechanics , engineering , crystallography , linguistics , philosophy
The electrical stability of molybdenum disulfide (MoS 2 ) transistors is crucial for their use in various applications. However, it is tricky to evaluate the inherent stability of MoS 2 transistors because it is highly dependent on environmental conditions during measurement such as humidity, light, and electrical factors. We studied the threshold voltage instability under negative bias stress at a variety of temperatures in a vacuum and in the dark to eliminate any environmental effects. In particular, the measurement of transfer curves under stress is minimized in order to study the inherent instability of MoS 2 transistors, even though the measurement of transfer curves is normally indispensable to check for the evolution of electrical instability. MoS 2 transistors have high average effective energy when compared to conventional amorphous Si and oxide semiconductor transistors, which allows for adequate operation at high temperatures. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)