Heavily doped Si:P emitters of crystalline Si solar cells: recombination due to phosphorus precipitation | Zendy

Min Byungsul | Zendy; Wagner Hannes | Zendy; DastgheibShirazi Amir | Zendy; Kimmerle Achim | Zendy; Kurz Heinrich | Zendy; Altermatt Pietro P. | Zendy

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Heavily doped Si:P emitters of crystalline Si solar cells: recombination due to phosphorus precipitation

Author(s) -

Min Byungsul,

Wagner Hannes,

DastgheibShirazi Amir,

Kimmerle Achim,

Kurz Heinrich,

Altermatt Pietro P.

Publication year - 2014

Publication title -

physica status solidi (rrl) – rapid research letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.786

H-Index - 68

eISSN - 1862-6270

pISSN - 1862-6254

DOI - 10.1002/pssr.201409138

Subject(s) - recombination , saturation current , phosphorus , auger effect , doping , solar cell , materials science , silicon , saturation (graph theory) , precipitation , optoelectronics , chemistry , auger , atomic physics , physics , meteorology , metallurgy , biochemistry , mathematics , quantum mechanics , voltage , combinatorics , gene

The measured saturation current density J 0e of heavily phosphorus‐doped emitters of crystalline Si solar cells is analysed by means of sophisticated numerical device modelling. It is concluded that Shockley–Read–Hall (SRH) recombination exceeds Auger recombination significantly; it is caused by inactive phosphorus. This explains the large discrepancies between measured and simulated J 0e values, observed persist‐ently over the last two decades in industrially fabricated Si solar cells. As a consequence, the heavily phosphorus‐diffused emitters still bear a significant potential to contribute to higher Si solar cell efficiency levels, if the amount of inactive phosphorus can be reduced. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

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