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In–Ga–Zn–O MESFET with transparent amorphous Ru–Si–O Schottky barrier
Author(s) -
Kaczmarski Jakub,
Grochowski Jakub,
Kaminska Eliana,
Taube Andrzej,
Jung Wojciech,
Piotrowska Anna
Publication year - 2014
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201409124
Subject(s) - schottky barrier , mesfet , schottky diode , materials science , optoelectronics , amorphous solid , annealing (glass) , sputtering , rectification , transistor , analytical chemistry (journal) , field effect transistor , chemistry , nanotechnology , voltage , electrical engineering , thin film , crystallography , diode , metallurgy , engineering , chromatography
Rectifying transparent amorphous Ru–Si–O Schottky contacts to In–Ga–Zn–O have been fabricated by means of reactive sputtering without any annealing processes nor semiconductor surface treatments. The ideality factor, effective Schottky barrier height and rectification ratio are equal to 1.6, 0.9 eV and 10 5 A/A, respectively. Ru–Si–O/In–Ga–Zn–O Schottky barriers were employed as gate electrodes for In–Ga–Zn–O metal–semiconductor field‐effect transistors (MESFETs). MESFET devices exhibiting on‐to‐off current ratio at the level of 10 3 A/A in a voltage range of 2 V, with subthreshold swing equal to 420 mV/dec were demonstrated. A channel mobility of 7.36 cm 2 /V s was achieved. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)