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GaN nanowires for piezoelectric generators
Author(s) -
Gogneau Noelle,
Chrétien Pascal,
Galopin Elisabeth,
Guilet Stephane,
Travers Laurent,
Harmand JeanChristophe,
Houzé Frédéric
Publication year - 2014
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201409105
Subject(s) - nanowire , piezoelectricity , materials science , voltage , optoelectronics , power density , layer (electronics) , wide bandgap semiconductor , power (physics) , nanotechnology , electrical engineering , physics , composite material , quantum mechanics , engineering
We demonstrate the high potential of GaN nanowires (NWs) to convert mechanical energy into electric energy. Using an atomic force microscope equipped with a Resiscope module, an average output voltage of –74 mV and a maximum of –443 mV ± 2% per NW were measured. This latter value is the highest reported so far for GaN NWs. By considering these output signals, we have estimated an average and a maximum power density generated by one layer of GaN NWs of the order of 5.9 mW/cm 2 and 130 mW/cm 2 , respectively. These results offer promising prospects for the use of GaN NWs for high‐efficiency ultracompact piezogenerators. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)