Premium
Atmospheric pressure chemical vapor deposition (APCVD) grown bi‐layer graphene transistor characteristics at high temperature
Author(s) -
Qaisi Ramy M.,
Smith Casey E.,
Hussain Muhammad M.
Publication year - 2014
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201409100
Subject(s) - chemical vapor deposition , graphene , materials science , oxide , optoelectronics , atmospheric pressure , transistor , deposition (geology) , dielectric , layer (electronics) , gate dielectric , analytical chemistry (journal) , nanotechnology , chemistry , voltage , electrical engineering , environmental chemistry , metallurgy , paleontology , oceanography , engineering , sediment , geology , biology
We report the characteristics of atmospheric chemical vapor deposition grown bilayer graphene transistors fabricated on ultra‐scaled (10 nm) high‐ κ dielectric aluminum oxide (Al 2 O 3 ) at elevated temperatures. We observed that the drive current increased by >400% as temperature increased from room temperature to 250 °C. Low gate leakage was maintained for prolonged exposure at 100 °C but increased significantly at temperatures >200 °C. These results provide important insights for considering chemical vapor deposition graphene on aluminum oxide for high temperature applications where low power and high frequency operation are required. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)