Atmospheric pressure chemical vapor deposition (APCVD) grown bi‐layer graphene transistor characteristics at high temperature | Zendy

Qaisi Ramy M. | Zendy; Smith Casey E. | Zendy; Hussain Muhammad M. | Zendy

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Atmospheric pressure chemical vapor deposition (APCVD) grown bi‐layer graphene transistor characteristics at high temperature

Author(s) -

Qaisi Ramy M.,

Smith Casey E.,

Hussain Muhammad M.

Publication year - 2014

Publication title -

physica status solidi (rrl) – rapid research letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.786

H-Index - 68

eISSN - 1862-6270

pISSN - 1862-6254

DOI - 10.1002/pssr.201409100

Subject(s) - chemical vapor deposition , graphene , materials science , oxide , optoelectronics , atmospheric pressure , transistor , deposition (geology) , dielectric , layer (electronics) , gate dielectric , analytical chemistry (journal) , nanotechnology , chemistry , voltage , electrical engineering , environmental chemistry , metallurgy , paleontology , oceanography , engineering , sediment , geology , biology

We report the characteristics of atmospheric chemical vapor deposition grown bilayer graphene transistors fabricated on ultra‐scaled (10 nm) high‐ κ dielectric aluminum oxide (Al 2 O 3 ) at elevated temperatures. We observed that the drive current increased by >400% as temperature increased from room temperature to 250 °C. Low gate leakage was maintained for prolonged exposure at 100 °C but increased significantly at temperatures >200 °C. These results provide important insights for considering chemical vapor deposition graphene on aluminum oxide for high temperature applications where low power and high frequency operation are required. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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