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Silicone oxidation for a‐Si:H passivation of wafers bonded to glass
Author(s) -
Granata Stefano Nicola,
Bearda Twan,
Beaucarne Guy,
Abdulraheem Yaser,
Gordon Ivan,
Poortmans Jef,
Mertens Robert
Publication year - 2014
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201409081
Subject(s) - passivation , wafer , materials science , adhesive , silicone , photovoltaics , silicon , solar cell , wafer bonding , composite material , optoelectronics , photovoltaic system , layer (electronics) , electrical engineering , engineering
A possible scenario for wafer‐based silicon photovoltaics is the processing of solar modules starting from thin silicon wafers bonded to glass. However, interactions between the adhesive used for bonding and the solar cell processing can affect the surface passivation of the bonded wafer and decrease cell performances. A method that suppresses these interactions and leads to state‐of‐the‐art a‐Si:H surface passivation is presented in this Letter. The method is based on an increase of the surface cross‐linking of a silicone adhesive by means of an O 2 plasma and it is successfully tested on three different silicones. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)