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Wire metamaterial based on semiconductor matrices
Author(s) -
Atrashchenko A.,
Nashchekin A.,
Mitrofanov M.,
Ulin V. P.,
Evtikhiev V. P.
Publication year - 2014
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201409060
Subject(s) - metamaterial , materials science , fabrication , nanowire , permittivity , semiconductor , nanotechnology , annealing (glass) , optoelectronics , electrochemistry , dielectric , composite material , electrode , chemistry , medicine , alternative medicine , pathology
In this Letter, we have presented a new approach for the fabrication of nanowire media (wire metamaterials) by electrochemical methods. A III B V porous matrices (a host medium) were prepared by anodic electrochemical etching of industrial substrates. The host medium has been filled via electrochemical deposition with a metal and by means of annealing process. We have shown that this technique can be used to fabricate a nanowire medium with unique parameters (such as aspect ratio, high electric permittivity and strong χ (3) nonlinearity near the fundamental absorption edge of the host media). (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)