Wire metamaterial based on semiconductor matrices | Zendy

Atrashchenko A. | Zendy; Nashchekin A. | Zendy; Mitrofanov M. | Zendy; Ulin V. P. | Zendy; Evtikhiev V. P. | Zendy

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Wire metamaterial based on semiconductor matrices

Author(s) -

Atrashchenko A.,

Nashchekin A.,

Mitrofanov M.,

Ulin V. P.,

Evtikhiev V. P.

Publication year - 2014

Publication title -

physica status solidi (rrl) – rapid research letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.786

H-Index - 68

eISSN - 1862-6270

pISSN - 1862-6254

DOI - 10.1002/pssr.201409060

Subject(s) - metamaterial , materials science , fabrication , nanowire , permittivity , semiconductor , nanotechnology , annealing (glass) , optoelectronics , electrochemistry , dielectric , composite material , electrode , chemistry , medicine , alternative medicine , pathology

In this Letter, we have presented a new approach for the fabrication of nanowire media (wire metamaterials) by electrochemical methods. A III B V porous matrices (a host medium) were prepared by anodic electrochemical etching of industrial substrates. The host medium has been filled via electrochemical deposition with a metal and by means of annealing process. We have shown that this technique can be used to fabricate a nanowire medium with unique parameters (such as aspect ratio, high electric permittivity and strong χ (3) nonlinearity near the fundamental absorption edge of the host media). (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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