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RRAMs based on anionic and cationic switching: a short overview
Author(s) -
Clima Sergiu,
Sankaran Kiroubanand,
Chen Yang Yin,
Fantini Andrea,
Celano Umberto,
Belmonte Attilio,
Zhang Leqi,
Goux Ludovic,
Govoreanu Bogdan,
Degraeve Robin,
Wouters Dirk J.,
Jurczak Malgorzata,
Vandervorst Wilfried,
Gendt Stefan De,
Pourtois Geoffrey
Publication year - 2014
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201409054
Subject(s) - resistive random access memory , protein filament , materials science , valence (chemistry) , dissolution , nanotechnology , electrode , electrical conductor , conductivity , optoelectronics , composite material , chemistry , chemical engineering , engineering , organic chemistry
Resistive random access memories are emerging as a new type of memory that has the potential to combine both the speed of volatile and the retention of nonvolatile memories. It operates based on the formation/dissolution of a low‐resistivity filament being constituted of either metallic ions or atomic vacancies within an insulating matrix. At present, the mechanisms and the parameters controlling the performances of the device remain unclear. In that respect, first‐principles simulations provide useful insights on the atomistic mechanisms, the thermodynamic and kinetics factors that modulate the material conductivity, providing guidance into the engineering of the operation of the device. In this paper, we review the current state‐of‐the‐art knowledge on the atomistic switching mechanisms driving the operation of copper‐based conductive bridge RRAM and HfO x valence change RRAM.Conceptual illustration of the RRAM device with the filament formation and disruption during its operation. AE/IM/CE are the active electrode/insulating matrix/ counterelectrode. The blue circles represent the conducting defects. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)