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Improving Cu 2 ZnSnS 4 (CZTS) solar cell performance by an ultrathin ZnO intermediate layer between CZTS absorber and Mo back contact
Author(s) -
Liu Xiaolei,
Cui Hongtao,
Li Wei,
Song Ning,
Liu Fangyang,
Conibeer Gavin,
Hao Xiaojing
Publication year - 2014
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201409052
Subject(s) - czts , materials science , layer (electronics) , solar cell , equivalent series resistance , optoelectronics , photovoltaic system , energy conversion efficiency , kesterite , nanotechnology , electrical engineering , engineering , voltage
The effects of an ultrathin ZnO intermediate layer deposited at the CZTS/Mo interface on CZTS solar cell performance have been investigated in this work. The ZnO layer inhibits the generation of MoS 2 layer and the formation of voids in the CZTS absorber. Consequently, the incorporation of this layer reduces the series resistance and increases the shunt resistance, which boosts photovoltaic conversion efficiency from 1.13% to 4.3%. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)