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Intrinsic energy band alignment of functional oxides
Author(s) -
Li Shunyi,
Chen Feng,
Schafranek Robert,
Bayer Thorsten J. M.,
Rachut Karsten,
Fuchs Anne,
Siol Sebastian,
Weidner Mirko,
Hohmann Mareike,
Pfeifer Verena,
Morasch Jan,
Ghinea Cosmina,
Arveux Emmanuel,
Günzler Richard,
Gassmann Jürgen,
Körber Christoph,
Gassenbauer Yvonne,
Säuberlich Frank,
Rao Gutlapalli Venkata,
Payan Sandrine,
Maglione Mario,
Chirila Cristina,
Pintilie Lucian,
Jia Lichao,
Ellmer Klaus,
Naderer Michael,
Reichmann Klaus,
Böttger Ulrich,
Schmelzer Sebastian,
Frunza Raluca C.,
Uršič Hana,
Malič Barbara,
Wu WenBin,
Erhart Paul,
Klein Andreas
Publication year - 2014
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201409034
Subject(s) - semiconductor , valence (chemistry) , electronic band structure , density functional theory , work function , materials science , nanotechnology , optoelectronics , chemistry , condensed matter physics , physics , computational chemistry , quantum mechanics , layer (electronics)
The energy band alignment at interfaces between different materials is a key factor, which determines the function of electronic devices. While the energy band alignment of conventional semiconductors is quite well understood, systematic experimental studies on oxides are still missing. This work presents an extensive study on the intrinsic energy band alignment of a wide range of functional oxides using photoelectron spectroscopy with in‐situ sample preparation. The studied materials have particular technological importance in diverse fields as solar cells, piezotronics, multiferroics, photo‐electrochemistry and oxide electronics. Particular efforts have been made to verify the validity of transitivity, in order to confirm the intrinsic nature of the obtained band alignment and to understand the underlying principles. Valence band offsets up to 1.6 eV are observed. The large variation of valence band maximum energy can be explained by the different orbital contributions to the density of states in the valence band. The framework provided by this work enables the general understanding and prediction of energy band alignment at oxide interfaces, and furthermore the tailoring of energy level matching for charge transfer in functional oxides. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)