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Solid‐phase epitaxy of InO x N y alloys via thermal oxidation of InN films on yttria‐stabilized zirconia
Author(s) -
Kobayashi Atsushi,
Itoh Takeki,
Ohta Jitsuo,
Oshima Masaharu,
Fujioka Hiroshi
Publication year - 2014
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201400007
Subject(s) - materials science , wurtzite crystal structure , yttria stabilized zirconia , epitaxy , cubic zirconia , annealing (glass) , crystallography , analytical chemistry (journal) , nanotechnology , metallurgy , chemistry , ceramic , layer (electronics) , zinc , chromatography
The characteristics of InO x N y alloy films prepared via thermal oxidation of InN epitaxial films with In‐ or N‐polarities grown on nearly lattice‐matched, yttria‐stabilized zirconia (YSZ) substrates are investigated. The InN films were oxidized to InO x N y with a gradual change in O/N composition by annealing in air. Structural analysis revealed that the temperature for phase transition from wurtzite structure depends on the polarity of InN, and N‐polar InO x N y films can retain their wurtzite structure even at higher temperatures compared with the case of In‐polar films. Furthermore, changes in the valence band structure and optical characteristics of the InO x N y alloys take place via thermal oxidation. These results indicate that InO x N y grown via thermal oxidation of N‐polar InN on YSZ can be considered as an alloy semiconductor for optoelectronic devices. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)