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Back Cover: Flexible semi‐transparent silicon (100) fabric with high‐k/metal gate devices (Phys. Status Solidi RRL 3/2013)
Author(s) -
Rojas Jhonathan P.,
Hussain Muhammad Mustafa
Publication year - 2013
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201390009
Subject(s) - electronics , silicon , transistor , chipset , materials science , electrical engineering , optoelectronics , nanotechnology , engineering physics , computer science , engineering , chip , voltage
Can we build a truly high‐performance computer that is both flexible and transparent? It is not simple to answer this ques‐tion. Today's computers have microprocessors where the billions of transistors have 3.1 GHz speed. To achieve this unprecedented speed the transistors are scaled down to 25 nm length, have high‐k/metal gate stacks instead of classical silicon oxide/poly silicon gate. A foldable computer will be ultra‐portable, will have ultra‐speed computation capability, and will be ultra‐low‐power, affordable and multi‐functional. Therefore, as a logical first step, high‐k/metal gate capacitors are fabricated on semiconductor industry's first choice bulk silicon (100), then they are released using conventional micro‐fabrication processes to achieve a flexible and transparent chipset on silicon fabric. This process, as outlined by J. P. Rojas and M. M. Hussain on pp. 187–191 , opens up opportunity for flexible inorganic electronics, transforming conventional electronics into flexible and transparent inorganic electronics without compromising their traditional performance, reliability, multi‐functionality and affordability.