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Cover Picture: One decade of fully transparent oxide thin‐film transistors: fabrication, performance and stability (Phys. Status Solidi RRL 9/2013)
Author(s) -
Frenzel Heiko,
Lajn Alexander,
Grundmann Marius
Publication year - 2013
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Reports
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201370450
Subject(s) - optoelectronics , materials science , fabrication , thin film transistor , transistor , semiconductor , subthreshold slope , figure of merit , threshold voltage , engineering physics , nanotechnology , electrical engineering , voltage , engineering , layer (electronics) , medicine , alternative medicine , pathology
In this issue, Frenzel, Lajn and Grundmann review the technological progress of fully transparent oxide thin film transistors (see pp. 605–615). They find a clear trend towards the usage of amorphous oxide semiconductors that can be fabricated by means of cheap and scalable fabrication techniques. This provides a way to the design of large‐scale transparent electronics. However, for the fabrication of adequately insulating dielectric layers, used in the leading technology of metal–insulator–semiconductor field‐effect transistors (MISFETs), still more sophisticated growth methods are needed. The authors show that metal–semiconductor field‐effect transistors (MESFETs) using transparent rectifying contacts as gate are a suitable alternative technology. The cover depicts a transparent MESFET (TMESFET) sample illuminated from the backside. The sample contains 88 TMESFETs with the contact configuration as shown in the scheme (S – source, D – drain, G – gate, M – mesa). On the right side, a typical measurement setup for bias, illumination and temperature stress is shown together with the most important figures of merit ( SS – subthreshold slope, I on/off – on/off current ratio, V on – turn‐on voltage and μ FE – field‐effect mobility).