Retention properties with high‐temperature resistance in (Bi,Pr)(Fe,Mn)O 3  thin film capacitor | Zendy

Nomura Yukihiro | Zendy; Nomura Keisuke | Zendy; Kinoshita Koyo | Zendy; Kawae Takeshi | Zendy; Morimoto Akiharu | Zendy

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Retention properties with high‐temperature resistance in (Bi,Pr)(Fe,Mn)O 3 thin film capacitor

Author(s) -

Nomura Yukihiro,

Nomura Keisuke,

Kinoshita Koyo,

Kawae Takeshi,

Morimoto Akiharu

Publication year - 2014

Publication title -

physica status solidi (rrl) – rapid research letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.786

H-Index - 68

eISSN - 1862-6270

pISSN - 1862-6254

DOI - 10.1002/pssr.201309022

Subject(s) - capacitor , materials science , polarization (electrochemistry) , thin film , analytical chemistry (journal) , electric field , substrate (aquarium) , optoelectronics , voltage , electrical engineering , chemistry , nanotechnology , physics , oceanography , chromatography , quantum mechanics , geology , engineering

(Bi 0.9 Pr 0.1 )(Fe 0.97 Mn 0.03 )O 3 (BPFM) thin film was deposited on Pt‐coated Si(100) substrate by chemical solution deposition. Remnant polarization and coercive field in the BPFM film capacitor were 113 °C/cm 2 and 630 kV/cm at the maximum electric field of 1000 kV/cm, respectively. Switching charge measured by a rectangular pulse measurement was 118 °C/cm 2 . Almost no polarization losses of BPFM film capacitor were observed even after retention time of 10 4 s at room temperature. Furthermore, the polarization loss at 450 °C was only 3.7% even after 10 4 s. These results indicate that BPFM film capacitor is suitable for non‐volatile memory applications at high temperature. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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