On the SET/RESET current asymmetry in electrochemical metallization memory cells | Zendy

Menzel Stephan | Zendy; Waser Rainer | Zendy

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On the SET/RESET current asymmetry in electrochemical metallization memory cells

Author(s) -

Menzel Stephan,

Waser Rainer

Publication year - 2014

Publication title -

physica status solidi (rrl) – rapid research letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.786

H-Index - 68

eISSN - 1862-6270

pISSN - 1862-6254

DOI - 10.1002/pssr.201308310

Subject(s) - reset (finance) , controllability , asymmetry , current (fluid) , set (abstract data type) , memristor , optoelectronics , resistive random access memory , materials science , protein filament , computer science , electrical engineering , physics , voltage , mathematics , engineering , quantum mechanics , composite material , financial economics , economics , programming language

In this Letter we discuss the SET/RESET current asymmetry of the bipolar resistive switching in electrochemical metallization cells based on an analytical switching model. The model is based on the growth and dissolution of a metallic filament. It accounts for the controllability of the low resistive state and the RESET current by tuning the SET current. Based on this model a possible physical explanation for the SET/RESET asymmetry is presented. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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