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On the SET/RESET current asymmetry in electrochemical metallization memory cells
Author(s) -
Menzel Stephan,
Waser Rainer
Publication year - 2014
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201308310
Subject(s) - reset (finance) , controllability , asymmetry , current (fluid) , set (abstract data type) , memristor , optoelectronics , resistive random access memory , materials science , protein filament , computer science , electrical engineering , physics , voltage , mathematics , engineering , quantum mechanics , composite material , financial economics , economics , programming language
In this Letter we discuss the SET/RESET current asymmetry of the bipolar resistive switching in electrochemical metallization cells based on an analytical switching model. The model is based on the growth and dissolution of a metallic filament. It accounts for the controllability of the low resistive state and the RESET current by tuning the SET current. Based on this model a possible physical explanation for the SET/RESET asymmetry is presented. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)