Semiconductor with intrinsic spin: a hybrid structure of zigzag edge graphene nanoribbon/single‐walled carbon nanotube | Zendy

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Semiconductor with intrinsic spin: a hybrid structure of zigzag edge graphene nanoribbon/single‐walled carbon nanotube

Author(s) -

Lou Ping

Publication year - 2014

Publication title -

physica status solidi (rrl) – rapid research letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.786

H-Index - 68

eISSN - 1862-6270

pISSN - 1862-6254

DOI - 10.1002/pssr.201308281

Subject(s) - spintronics , graphene , zigzag , carbon nanotube , materials science , condensed matter physics , semiconductor , ferromagnetism , spin (aerodynamics) , magnetic semiconductor , graphene nanoribbons , nanotechnology , optoelectronics , physics , geometry , mathematics , thermodynamics

A hybrid structure of n ‐ZGRN/( m , m )SWCNT, namely n ‐ZGNR‐( m , m )SWCNT, is predicted. It is found that the n ‐ZGNR‐( m , m )SWCNT is a ferromagnetic semiconductor with intrinsic spin in which the manipulation of spin‐polarized currents can be achieved just simply by applying a gate voltage. Moreover, compared to n ‐ZGNR, the n‐ ZGNR‐( m , m )SWCNT possesses enhanced local magnetic moment. Semiconductors with intrinsic spin represent a new direction in the exploration of materials for spintronics and good prospects for practical spintronic applications. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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