Premium
Semiconductor with intrinsic spin: a hybrid structure of zigzag edge graphene nanoribbon/single‐walled carbon nanotube
Author(s) -
Lou Ping
Publication year - 2014
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201308281
Subject(s) - spintronics , graphene , zigzag , carbon nanotube , materials science , condensed matter physics , semiconductor , ferromagnetism , spin (aerodynamics) , magnetic semiconductor , graphene nanoribbons , nanotechnology , optoelectronics , physics , geometry , mathematics , thermodynamics
A hybrid structure of n ‐ZGRN/( m , m )SWCNT, namely n ‐ZGNR‐( m , m )SWCNT, is predicted. It is found that the n ‐ZGNR‐( m , m )SWCNT is a ferromagnetic semiconductor with intrinsic spin in which the manipulation of spin‐polarized currents can be achieved just simply by applying a gate voltage. Moreover, compared to n ‐ZGNR, the n‐ ZGNR‐( m , m )SWCNT possesses enhanced local magnetic moment. Semiconductors with intrinsic spin represent a new direction in the exploration of materials for spintronics and good prospects for practical spintronic applications. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)