Resistive switching behaviour of highly epitaxial CeO 2  thin film for memory application | Zendy

Zhang Jun | Zendy; Zhao Hongbin | Zendy; Wei Feng | Zendy; Yang Mengmeng | Zendy; Yang Zhimin | Zendy; Chen Qiuyun | Zendy; Chen Jun | Zendy

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Resistive switching behaviour of highly epitaxial CeO 2 thin film for memory application

Author(s) -

Zhang Jun,

Zhao Hongbin,

Wei Feng,

Yang Mengmeng,

Yang Zhimin,

Chen Qiuyun,

Chen Jun

Publication year - 2014

Publication title -

physica status solidi (rrl) – rapid research letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.786

H-Index - 68

eISSN - 1862-6270

pISSN - 1862-6254

DOI - 10.1002/pssr.201308158

Subject(s) - epitaxy , materials science , non volatile memory , thermal conduction , x ray photoelectron spectroscopy , optoelectronics , thin film , oxygen , trapping , molecular beam epitaxy , resistive random access memory , high resistance , nanotechnology , chemistry , chemical engineering , composite material , electrode , ecology , agronomy , organic chemistry , layer (electronics) , engineering , biology

We report on the remarkable potential of highly epitaxial and pure (001)‐oriented CeO 2 thin films grown on conducting Nb‐doped SrTiO 3 (NSTO) substrates by laser molecular beam epitaxy for nonvolatile memory application. Resistive switching (RS) devices with the structure of Au/epi‐CeO 2 /NSTO exhibit reversible and steady bipolar RS behaviour with large high/low resistance ratio and a narrow dispersion of the resistance values. Detailed analysis of the conduction mechanisms reveals that the trapping/detrapping processes and oxygen vacancies migration play important roles in the switching behaviour. In the light of XPS measurement results, the CeO 2 /NSTO interface with oxygen vacancies or defects is responsible for the RS effect. Furthermore, a model is proposed to explain this resistance switching behaviour. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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