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Interface‐engineered resistive memory using plasma‐modified electrode on polyimide substrate
Author(s) -
Zheng ZhiWei,
Hsu HsiaoHsuan,
Cheng ChunHu
Publication year - 2014
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201308143
Subject(s) - resistive random access memory , electrode , materials science , plasma , optoelectronics , substrate (aquarium) , current (fluid) , polyimide , vacancy defect , resistive touchscreen , analytical chemistry (journal) , nanotechnology , electrical engineering , chemistry , layer (electronics) , crystallography , physics , oceanography , engineering , quantum mechanics , chromatography , geology
In this study, we report a low power Ni/GeO x /TiO y /TaN resistive random access memory (RRAM) using plasma‐modified electrode. The low sub‐mA switching current, highly uniform switching cycles (only 4% variation for the set) and good high‐temperature current distribution at 125 °C are simultaneously achieved in this RRAM device. Such good performance can be ascribed to interface plasma treatment on TaN electrode where the resulting Ta–N ionic bond increases the oxidation resistance and reduces the oxygen vacancy concentration near TaN interface that is favorable to lower switching power and improve high‐temperature current distribution.(© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)