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Passivation of black silicon boron emitters with atomic layer deposited aluminum oxide
Author(s) -
Repo Päivikki,
Benick Jan,
Gastrow Guillaume von,
Vähänissi Ville,
Heinz Friedemann D.,
Schön Jonas,
Schubert Martin C.,
Savin Hele
Publication year - 2013
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201308096
Subject(s) - passivation , aluminum oxide , boron , silicon , layer (electronics) , materials science , aluminium , atomic layer deposition , black silicon , silicon oxide , oxide , optoelectronics , metallurgy , nanotechnology , chemistry , silicon nitride , organic chemistry
The nanostructured surface – also called black silicon (b‐Si) – is a promising texture for solar cells because of its extremely low reflectance combined with low surface recombination obtained with atomic layer deposited (ALD) thin films. However, the challenges in keeping the excellent optical properties and passivation in further processing have not been addressed before. Here we study especially the applicability of the ALD passivation on highly boron doped emitters that is present in crystalline silicon solar cells. The results show that the nanostructured boron emitters can be passivated efficiently using ALD Al 2 O 3 reaching emitter saturation current densities as low as 51 fA/cm 2 . Furthermore, reflectance values less than 0.5% after processing show that the different process steps are not detrimental for the low reflectance of b‐Si. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)