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Sb 2 S 3 quantum dots: diffusion‐controlled growth and characterization
Author(s) -
Mishra Rakesh K.,
Vedeshwar Agnikumar G.,
Tandon Ram P.
Publication year - 2013
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201308082
Subject(s) - quantum dot , antimony , condensed matter physics , diffusion , characterization (materials science) , band gap , inverse , materials science , blueshift , range (aeronautics) , nanotechnology , molecular physics , chemistry , optoelectronics , physics , photoluminescence , quantum mechanics , mathematics , metallurgy , geometry , composite material
Abstract The quantum dots of antimony trisulphide, a potential semiconductor for various applications, are grown in glass matrix for the first time and are characterized by various techniques. The dependence of the average dot size on growth parameters like growth temperature and time is systematically studied for the dot size range of 5–80 nm. The linear blue shift of band gap of dots with inverse square of dot size clearly indicates the typical behavior of quantum dots in a strong quantum confinement regime. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)